Electrical Transport Measurements on Layered La(O,F)BiS2 under Extremely High Pressure
نویسندگان
چکیده
Layered La(O,F)BiS2 exhibits drastic enhancements of the superconducting transition temperature (Tc) under high pressure among BiS2-based family. However, high-pressure application beyond a high-Tc phase monoclinic structure has not been conducted. In this study, electrical transport properties in single crystal are measured pressures up to 83 GPa. An insulating without superconductivity is observed higher-pressure region above 16 Moreover, sample metallicity and 60 The newly hidden semiconducting reentrant have attracted much attention compounds.
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ژورنال
عنوان ژورنال: Condensed matter
سال: 2022
ISSN: ['2410-3896']
DOI: https://doi.org/10.3390/condmat7010025